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A systematic dry etching process for profile control of quantum dots and nanoconstrictions
(Elsevier B.V., 2007-08)
In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...
Single-Electron Transistors (SET): literature review
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
Single-electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The SET are often discussed as ...
The effects of multiple zincation process on Aluminum Bond Pad surface for Electroless Nickel Immersion Gold deposition
(American Society of Mechanical Engineers (ASME), 2006-09)
This paper reports the effects of a multiple zincation processon the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topogtaphy and morphology ...
Simulasi Fabrikasi Simpangan Cetek Ultra menggunakan Resapan Dopan daripada SOD (Spin On Dopant)
(Universiti Malaysia Perlis, 2006)
Pembentukan simpangan cetek ultra merupakan suatu proses yang kritikal dalam fabrikasi peranti-peranti submikron bagi teknologi litar terkamil pada masa hadapan. Di dalam penulisan ini, simulasi proses pembentukan simpangan ...
Cost Effective Negative Plenum Cleanroom for Microelectronic Engineering undergraduate
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
The Negative Plenum Cleanroom which is design and built by KUKUM is primarily used for the teaching of the undergraduate microelectronic course. The cleanroom is approximately 115m² in size. The level of cleanliness in the ...
Effect of alignment mark architecture on alignment signal behavior in advanced lithography
(Universiti Malaya, 2007)
Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ...
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)
We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...