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dc.contributor.authorPungut, Ibrahim
dc.contributor.authorRosnazri, Ali
dc.contributor.authorIsmail, Daut, Prof. Dr.
dc.contributor.authorSoib, Taib, Prof. Madya Dr.
dc.contributor.authorDina Maizana, Maiz Ahmad
dc.contributor.authorRisnidar Chan Bahaudin, Ir.
dc.date.accessioned2012-10-08T02:36:49Z
dc.date.available2012-10-08T02:36:49Z
dc.date.issued2010-10-16
dc.identifier.isbn978-967-5760-03-7
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/21231
dc.descriptionInternational Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia.en_US
dc.description.abstractThis paper presents the design of a high-side N-channel MOSFET driver using discrete components for low voltage applications, ranging from 3V up to 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.relation.ispartofseriesProceedings of the International Postgraduate Conference on Engineering (IPCE 2010)en_US
dc.subjectHigh-side N-channel MOSFET driveren_US
dc.subjectMetal Oxide Semiconductor Field-Effect Transistor (MOSFET)en_US
dc.subjectMOSFET driveren_US
dc.titleHigh side MOSFET driver design using discrete components for low voltage applicationsen_US
dc.typeWorking Paperen_US
dc.publisher.departmentCentre for Graduate Studiesen_US
dc.contributor.urlpungut@unimap.edu.myen_US
dc.contributor.urlsoibtaib@eng.usm.myen_US


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