| dc.contributor.author | Nurhafizah, Ramli | |
| dc.contributor.author | Zaliman, Sauli, Dr. | |
| dc.contributor.author | Retnasamy, Vithyacharan | |
| dc.contributor.author | They, Yee Chin | |
| dc.contributor.author | Khairul Anwar, Mohamad Khazali | |
| dc.contributor.author | Nooraihan, Abdullah | |
| dc.date.accessioned | 2014-04-14T13:13:27Z | |
| dc.date.available | 2014-04-14T13:13:27Z | |
| dc.date.issued | 2014-01 | |
| dc.identifier.citation | Applied Mechanics and Materials, vol.487, 2014, pages 29-32 | en_US |
| dc.identifier.issn | 1662-7482 | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/dspace/handle/123456789/33691 | |
| dc.description | Link to publisher's homepage at http://www.ttp.net/ | en_US |
| dc.description.abstract | Barium Strontium Titanate (BST) a common topic in the microelectronic field for many devices which is mainly on dynamic random access memories (DRAM). There are many methods of preparing BaₓSr₁-ₓTiO3; barium strontium titanate. In this work, sol-gel method was used as it has some advantages like better homogeneity, lower cost, lower processing temperature and easier fabrication. BaₓSr₁-ₓTiO3 solution was deposited on the silicon substrate of 4 different thicknesses with different ratio of the concentration of Barium (Ba). The thickness of the thin film has a linear increase as the Ba content increases. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Trans Tech Publications | en_US |
| dc.subject | Barium Strontium Titanate (BST) | en_US |
| dc.subject | Film thickness | en_US |
| dc.title | BaₓSr₁-ₓ TiO₃ different thickness analysis using sol gel approach | en_US |
| dc.type | Article | en_US |
| dc.identifier.url | http://www.scientific.net/AMM.487.29 | |
| dc.identifier.doi | 10.4028/www.scientific.net/AMM.487.29 | |
| dc.contributor.url | zaliman@unimap.edu.my | en_US |
