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dc.contributor.authorNaeemullah
dc.contributor.authorMurtaza, Ghulam
dc.contributor.authorRabah, Khenata, Prof. Dr.
dc.contributor.authorAli Hussain, Reshak, Prof. Dr.
dc.contributor.authorNaeem, S.
dc.contributor.authorMadiha N., Khalid
dc.date.accessioned2014-06-02T03:46:42Z
dc.date.available2014-06-02T03:46:42Z
dc.date.issued2014-03
dc.identifier.citationInternational Journal of Modern Physics B, vol. 28(6), 2014, pages 1-11en_US
dc.identifier.issn0217-9792
dc.identifier.urihttp://www.worldscientific.com/doi/abs/10.1142/S0217979214500477?af=R
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/34951
dc.descriptionLink to publisher's homepage at http://www.worldscientific.com/en_US
dc.description.abstractFirst principle calculations on cesium chloride (CsCl) compound have been performed using state of the art full potential linearized augmented plane wave (FP-LAPW) method. Calculated structural parameters are found in excellent agreement to the experimental results. Band gap of the compound decreases with the increase of pressure. At 507GPa, electronic nature of the compound changed from the insulating to metallic. Changes are reported in the optical properties like real and imaginary parts of dielectric function, optical conductivity and reflectivity of CsCl on application of high pressure.en_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publishing Companyen_US
dc.subjectCsClen_US
dc.subjectFP-LAPWen_US
dc.subjectOptoelectronicsen_US
dc.subjectPressure effecten_US
dc.titleInsulator to metal transition and optical response of CsCl under pressureen_US
dc.typeArticleen_US
dc.contributor.urlmurtaza@icp.edu.pken_US
dc.contributor.urlkhenata_rabah@yahoo.fren_US
dc.contributor.urlmaalidph@yahoo.co.uken_US


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