dc.contributor.author | Mohd Zamzuri, Mohammad Zain | |
dc.contributor.author | Junji, Sasano | |
dc.contributor.author | Fariza, Mohamad | |
dc.contributor.author | Masanobu, Izaki | |
dc.date.accessioned | 2016-11-28T08:26:18Z | |
dc.date.available | 2016-11-28T08:26:18Z | |
dc.date.issued | 2014-10 | |
dc.identifier.citation | ECS Transactions, vol.64 (15), 2014, pages 21-26 | en_US |
dc.identifier.issn | 1938-6737 (online) | |
dc.identifier.issn | 1938-5862 | |
dc.identifier.uri | http://ecst.ecsdl.org/ | |
dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/44152 | |
dc.description | Link to publisher's homepage at http://ecst.ecsdl.org/ | en_US |
dc.description.abstract | The <111>-Cu2O/<0001>-ZnO photovoltaic (PV) device has been constructed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO2 layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The <0001>-ZnO/TiO2/<111>-Cu2O PV-devices showed a photovoltaic performance under AM1.5 illumination, and the performance changed depending on the preparation condition for the TiO2 layer. The substrate-type <0001>-ZnO/TiO2/<111>-Cu2O PV device prepared under optimized condition showed a photovoltaic performance with the short-circuit current density of 2.14 mAcm-2 | en_US |
dc.language.iso | en | en_US |
dc.publisher | The Electrochemical Society (ECS) | en_US |
dc.subject | Photons | en_US |
dc.subject | Electrochemical reactions | en_US |
dc.subject | Photovoltaic devices | en_US |
dc.subject | Sol-gel technique | en_US |
dc.title | Photon-assisted electrochemical construction of <0001>-n-ZnO/<111>-p-Cu2O photovoltaic devices with intermediate TiO2 layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/06415.0021ecst | |
dc.contributor.url | mzamzuri@unimap.edu.my | en_US |