dc.contributor.author | Rummana, Matin | |
dc.contributor.author | Bashar, M. S. | |
dc.contributor.author | Munira, Sultana | |
dc.contributor.author | Aninda Nafis Ahmed | |
dc.contributor.author | Gafur, A. | |
dc.date.accessioned | 2018-06-08T03:48:26Z | |
dc.date.available | 2018-06-08T03:48:26Z | |
dc.date.issued | 2018-04 | |
dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.11 (2), 2018, pages 221-232 | en_US |
dc.identifier.issn | 1985-5761 (Printed) | |
dc.identifier.issn | 1997-4434 (Online) | |
dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/53607 | |
dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
dc.description.abstract | This study aims to deposit different thicknesses of CdS thin films with a variation of
deposition time by using chemical bath deposition technique. The aqueous solution of
cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea were used
During the deposition process. The analysis was done to observe the effect of annealing on
structural, optical and electrical properties of the CdS thin films. From the x‐ray diffraction,
this helps to confirm the cubic CdS phase formation, with a preferred orientation along
(111). The finding indicates that the crystallite size is larger in films when it is deposited
with low deposition rate. The crystallite size increased with increasing thickness and
decreased after annealing. After annealing, the mobility and carrier concentration of the
CdS thin films of different thicknesses is increasing and the resistivity decreasing. This
study showed that the crystal structure, band gap, Urbach energy and electrical properties
of CdS thin films can be changed when Cds thin films experienced annealing. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
dc.subject | Cds Thin Film | en_US |
dc.subject | Chemical Bath Deposition | en_US |
dc.subject | Annealing Effect | en_US |
dc.subject | XRD | en_US |
dc.subject | Band Gap | en_US |
dc.title | Annealing Effects on the Structural, Optical and Electrical Properties of Chemically Deposited CdS Thin Films using NH4Cl Complexing Agent | en_US |
dc.type | Article | en_US |
dc.contributor.url | bashar@agni.com | en_US |