dc.contributor.author | Y., Al-Douri | |
dc.contributor.author | R., Khenata | |
dc.contributor.author | A.H., Reshak | |
dc.date.accessioned | 2011-08-25T08:15:25Z | |
dc.date.available | 2011-08-25T08:15:25Z | |
dc.date.issued | 2011-09 | |
dc.identifier.citation | Solar Energy, vol. 85(9), 2011, pages 2283-2287 | en_US |
dc.identifier.issn | 0038-092X | |
dc.identifier.uri | http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V50-5397D3C-1-6&_cdi=5772&_user=1659113&_pii=S0038092X11002295&_origin=&_coverDate=09%2F30%2F2011&_sk=999149990&view=c&wchp=dGLbVzz-zSkzV&md5=d9c55b7e9229a50948da194ea9efbc23&ie=/sdarticle.pdf | |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/13616 | |
dc.identifier.uri | 10.1016/j.solener.2011.06.017 | |
dc.description | Link to publisher's homepage at www.elsevier.com/ | en_US |
dc.description.abstract | Further study of the quantum dot potential for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted as a function of dot diameter that is in turn used to test the validity of our model. The obtained results show a reasonable agreement in comparison with experimental data and theoretical results. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Ltd. | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Quantum dot | en_US |
dc.subject | Si | en_US |
dc.title | Investigated optical studies of Si quantum dot | en_US |
dc.type | Article | en_US |