Confirmation of bulk modulus model of III-V compounds under pressure effect using tight-binding method

dc.contributor.author	Yarub, Al - Douri
dc.date.accessioned	2013-01-11T02:33:13Z
dc.date.available	2013-01-11T02:33:13Z
dc.date.issued	2012-06
dc.identifier.citation	Optik, vol. 123 (11), 2012, pages 989-992	en_US
dc.identifier.issn	0030-4026
dc.identifier.uri	http://www.sciencedirect.com/science/article/pii/S003040261100369X
dc.identifier.uri	http://dspace.unimap.edu.my/123456789/22935
dc.description	Link to publisher's homepage at http://www.elsevier.com/	en_US
dc.description.abstract	The electronic band structure for GaAs, GaSb and GaP is studied using semi-empirical tight-binding sp 3s* method for tetrahedrally coordinated cubic materials. By means of our empirical model, the structural property of bulk modulus at critical transition pressure is calculated. Also, the GaAs, GaSb and GaP compounds are found to be indirect-gap semiconductors under pressure effect. The noticed behaviour of the bonding character reflects the structural phase transition. These results are in good agreement with experimental and theoretical data.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier GmbH	en_US
dc.subject	Bulk modulus	en_US
dc.subject	III-V compounds	en_US
dc.subject	TB method	en_US
dc.title	Confirmation of bulk modulus model of III-V compounds under pressure effect using tight-binding method	en_US
dc.type	Article	en_US
dc.contributor.url	yarub@unimap.edu.my	en_US