Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique

Abstract

Ultra shallow junction fabrication in large scaled integrated (ULSI) technology is one of the difficult challenges in device manufacturing. Low energy ion implantation is the most widely used technique at present to form ultra shallow junction but this method has some limitations such as crystal damage, however, many researches has been done to overcome this but It seems difficult to do away with this limitation . An ultra high shallow junction formation of < 30nm was proposed through thermal diffusion from spin-on dopants into silicon, this study was carried out by simulation using TSUPREM-4 from Synopsys Inc to determine the junction depth and the sheet resistance in order to fulfill the standard semiconductor device design requirements. Ultra shallow junction which is defined to be less than 30 nm in depth was obtained through this simulation using very simple and easy spin-on dopants technique. This economical spin-on dopants (SOD) technique is proven as one of promising method for shallow junction formation in future generations with little or no device structural damage or process limitation