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dc.contributor.authorMd Eaqub, Ali, Dr.
dc.contributor.authorDhahi, Th Sabar
dc.contributor.authorRasel, Das
dc.contributor.authorUda, Hashim, Prof. Dr.
dc.date.accessioned2014-03-12T08:13:08Z
dc.date.available2014-03-12T08:13:08Z
dc.date.issued2013-09
dc.identifier.citationSensors and Actuators, A: Physical, vol. 199, 2013, pages 304-309en_US
dc.identifier.issn0924-4247
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0924424713002938
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32626
dc.descriptionLink to publisher's homepage at http://www.elsevier.com/en_US
dc.description.abstractThis report described less than 10-nm gap silicon-based electrode sensor for the discriminating detection of complementary, non-complementary and single nucleotide mismatched DNA targets. Discriminating detection of nucleic acid sequences is a key step in biodiagnostics, drug discovery, gene expression profiling, environmental monitoring and forensic studies. The method is based on the measurement of capacitance, conductance and permittivity profiles of the nanogap electrodes upon target oligonucleotide hybridization using a simple dielectric analyzer. The nanogap surface was at first modified with a self-assembled layer of amino functionalities followed by non-covalent adsorption of gold nanoparticles to create an attachment surface for the thiol-modified DNA probe. The capacitance, conductance and permittivity profiles of the biosensor clearly differentiated complementary, non-complementary and single mismatch target hybridization without the need of any labeling steps, enzymatic treatment or metalization chemistry. The detection limit and range of the silicon nanogap biosensor were 3 nmol/L and 3-15 nmol/L of target DNA.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.subjectDiscriminating detectionen_US
dc.subjectElectrical detectionen_US
dc.subjectEnzymatic treatmenten_US
dc.subjectMetalization chemistryen_US
dc.subjectSNP genotypingen_US
dc.titleDNA hybridization detection using less than 10-nm gap silicon nanogap structureen_US
dc.typeArticleen_US
dc.contributor.urleaqubali@um.edu.myen_US
dc.contributor.urlsthikra@yahoo.comen_US
dc.contributor.urluda@unimap.edu.myen_US


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