Cu-SiCp composites as advanced electronic packaging materials

Abstract

The demand for advanced thermal management materials such as silicon carbide particles reinforced copper matrix (Cu-SiCp) composites is increasing due to the stringent design requirement in the electronic packaging industries. High interest on Cu-SiCp composites is highlighted by the high thermal conductivity and low coefficient of thermal expansion (CTE) properties. However, the thermal properties of the Cu-SiCp composites are constrained by the bonding between the copper matrix and the silicon carbide particles (SiCp) reinforcement. In the powder metallurgical (PM) methodology in particular, the bonding between the two constituents is weak, thus demoting the thermal properties of the Cu-SiCp composites. In order to improve the interface bonding, the SiCp were copper coated via electroless coating process. Based on the experimental results and findings, a continuous copper deposition on the SiCp was obtained via the electroless plating process. The copper film was found to be high in purity and homogeneously deposited on the SiCp surfaces. The CTE values of the Cu-Coated Cu-SiCp composites were found significantly lower than those of the non-Coated Cu-SiCp composites and were in agreement with Kernels model which accounts for both the shear and isostatic stresses developed in the component phases.