Design and development of extended power amplifier specifically for X-band applications

Abstract

This paper concern with the design and simulation of RF amplifier using MESFET [TIM 8596_4UL] at 8.1 GHz to 10 GHz within x-band frequency range. RF amplifier designs rely on the terminal characteristics of the transistor as represented by Sparameter. S-parameter of transistor provides the necessary values to perform the analysis such as stability, DC-biasing and available gain. Based on the S-parameter of the transistor and certain performance requirements a systematic approach for the designing of RF power amplifier is developed using ADS [Advanced Design System]. RF amplifier circuit designed and simulated in ADS which has better stability but low magnitude of S21. By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant were achieved better performance.