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dc.contributor.authorGholamreza Zare Fatin
dc.contributor.authorVida Orduee Niar
dc.date.accessioned2019-10-14T14:00:50Z
dc.date.available2019-10-14T14:00:50Z
dc.date.issued2019-10
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.12(4), 2019, pages 437-450en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/62437
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractIn this paper, a Gm-C Low-pass filter with high linearity and tunable in-band attenuation for WiMAX/LTE receiver is presented. A linear Gm-cell is proposed and used as a key building block in design of the filter. The linear Gm-cell employs a circuit technique to reduce the nonlinearity of the source follower (SF) stage resulting from unmatched signal swings at the gate and source terminals of the input transistor. The Gm-cell was used to build a biquad bloc, which was utilized to construct a 3rd-order Butterworth low pass filter. The proposed filter consists of a buffer and a biquad stage to form the 3rd-order transfer function. The simulation results of the filter for bandwidth of 10MHz show that the IIP3 of the filter was equal to 29.5 dBm. The minimum in-band noise density was 22.6 nV/√Hz and power consumption was 10.8 mW. The supply voltage of the filter was 1 V.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectGm-C filteren_US
dc.subjectWiMAX/LTE receiveren_US
dc.subjectLinear Gmen_US
dc.subjectSource-Followeren_US
dc.titleA 3rd order low-pass filter with high linearity and tunable in-band attenuation for WiMAX/LTE receiveren_US
dc.typeArticleen_US
dc.contributor.urlzare@uma.ac.iren_US


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