dc.contributor.author | Sami Salman, Chiad | |
dc.contributor.author | Tahseen H., Mubarak | |
dc.date.accessioned | 2020-06-24T04:11:04Z | |
dc.date.available | 2020-06-24T04:11:04Z | |
dc.date.issued | 2020-04 | |
dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.13(2), 2020, pages 221-232 | en_US |
dc.identifier.issn | 1985-5761 (Printed) | |
dc.identifier.issn | 1997-4434 (Online) | |
dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/65224 | |
dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
dc.description.abstract | Hematite (Fe2O3) and titanium (1 wt% and 3 wt%) doped Fe2O3 were prepared onto glass and p-type silicon wafer using the pulsed laser deposition technique. X-ray diffraction analysis indicates that samples of pure and Ti-doped were polycrystalline with a crystal orientation along (113) plane. The average grain size increases with the increasing titanium content. Surface morphology was studied through a Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), which reveal that grains are columnar in shape. UV-visible transmission spectroscopy reveals that the deposited films are transparent within a visible range. The value of the optical bandgap exhibits a decrease from 1.93 eV to 1.48 eV as titanium concentration increases. Gas sensitivity measurements at 30°C. showed a decrease in sensitivity with the increase of doping and gas concentration. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
dc.subject | Fe2O3 | en_US |
dc.subject | Ti | en_US |
dc.subject | SEM | en_US |
dc.subject | AFM | en_US |
dc.subject | Gas Sensitivity | en_US |
dc.title | The effect of Ti on physical properties of Fe2O3 thin films for gas sensor applications | en_US |
dc.type | Article | en_US |
dc.identifier.url | http://ijneam.unimap.edu.my | |
dc.contributor.url | dr.sami@uomustansiriyah.edu.iq | en_US |