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dc.contributor.authorNorliana, Yusof
dc.contributor.authorBadariah, Bais
dc.contributor.authorNorhayati, Soin
dc.contributor.authorBurhanuddin, Yeop Majlis
dc.date.accessioned2021-02-25T01:01:27Z
dc.date.available2021-02-25T01:01:27Z
dc.date.issued2020-12
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.13(Special Issue), 2020, pages 275-280en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/69850
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractProcess of transferring poly (methyl methacrylate) (PMMA)/Graphene layer to form a freestanding membrane requires a proper method to ensure that the membrane is well suspended with high graphene coverage. This paper demonstrates a method for transferring PMMA/Graphene onto an etched silicon cavity, which forms freely suspended graphene using ferric chloride (FeCl3) solution. The characterisation was performed with an optical microscope and Raman spectroscopy to examine the quality of the transferred PMMA/Graphene membrane. Wet transfer process by FeCl3 etchant was successfully applied to develop a freestanding PMMA/Graphene membrane on a silicon etch cavity. From the study, 0.5M concentration of FeCl3 etchant is more suitable to be applied compared to 1.0 M in order to form a freestanding PMMA / Graphene membrane.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.relation.ispartofseriesNANOSYM, 2019;
dc.subjectFreestanding PMMA/Grapheneen_US
dc.subjectFerric chloride etchanten_US
dc.subjectPMMA/Graphene transferen_US
dc.subjectPMMA/Graphene membraneen_US
dc.titleWet transfer process for MEMS freestanding PMMA/Graphene membrane developmenten_US
dc.typeArticleen_US
dc.contributor.urlbadariah@ukm.edu.myen_US


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