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dc.contributor.authorBudi, Harsono
dc.contributor.authorJohansah, Liman
dc.contributor.authorHendradi, Hardhienata
dc.contributorDepartment of Electrical Engineering, Faculty of Engineering and Computer Science, Universitas Kristen Krida Wacana, Indonesiaen_US
dc.contributorDepartment of Physics, Faculty of Mathematics and Natural Sciences, Bogor Agricultural University, Indonesiaen_US
dc.creatorNani, Djohan
dc.creatorIrzaman
dc.date.accessioned2022-10-07T01:42:25Z
dc.date.available2022-10-07T01:42:25Z
dc.date.issued2022-01
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.15(1), 2022, pages 17-26en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn2232-1535 (online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/76353
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractIn this experiment, undoped, 2 wt.%, 4 wt.% and 6 wt.% In2O3 doped LiTaO3 thin films were successfully prepared by utilizing a spin coater to carry out chemical solution deposition on the substrate surface (CSD method). The films were grown on the p-type Si (100) substrates with 2 M in 2-methoxyethanol precursor, whose solubility was twisted at 4000 rpm for 30 seconds. Crystalline formation of the films was carried out at annealing temperature 850 oC, held for 15 hours at a temperature rise rate of 1.67 oC/min. In term of XRD analysis, the structural properties of LiTaO3 thin film undergo increment in crystallite size and lattice parameter values as the concentration of indium doping increase. The optical properties and Raman spectra of the films were then obtained using UV-Vis spectrometer and Raman spectroscopy. From the XRD measurement, the result shows a hexagonal crystal structure with lattice parameters a = 5.032-5.051 Å and c = 13.643-13.676 Å, and from the UV-Vis data, we observed that the films have a 5.034-5.184 Ev energy gap with 1.70364373 – 1.70364377 refractive index. Raman analysis produces peaks of LiTaO3, A1TO10 (In2O3) and A1LO10 (In2O3). Based on the characterization results, it can be concluded that the 6 wt% In2O3 doped LiTaO3 thin films are very promising for application as a light sensor.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherLiTaO3en_US
dc.subject.otherIn2O3en_US
dc.subject.otherx-ray diffractionen_US
dc.subject.otherRaman spectroscopyen_US
dc.subject.otheruv-vis spectroscopyen_US
dc.titleStructural, optical properties and Raman Spectroscopy of In2O3 Doped LiTaO3 thin filmsen_US
dc.typeArticleen_US
dc.contributor.urlirzaman@apps.ipb.ac.iden_US
dc.contributor.urlnani.djohan@ukrida.acen_US


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