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dc.contributor.authorKhalid, N.
dc.contributor.authorSingh, J.
dc.contributor.authorLe, H.P.
dc.contributor.authorDevlin, J.
dc.contributor.authorZaliman, Sauli, Prof. Madya
dc.date.accessioned2010-08-03T04:23:37Z
dc.date.available2010-08-03T04:23:37Z
dc.date.issued2009-01-19
dc.identifier.citationp. 77-80en_US
dc.identifier.isbn978-142444669-8
dc.identifier.urihttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5397444
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8435
dc.descriptionLink to publisher's homepage at http://ieeexplore.ieee.org/en_US
dc.description.abstractThis paper presents the design and optimisation of a very high Quality (Q) factor inductor using MEMS technology for 10GHz to 20GHz frequency band. The effects of various parameters of a symmetric inductor structure on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on Sillcon-on-Sapphire (SOS) substrate because it offers superior characteristics of low substrate loss due to the high resistivity of the sapphire material and low capacitive coupling to the substrate. It is also been suspended from the substrate in order to reduce the substrate loss and improved the Q factor. Results indicate that a maximum Q factor of 192 for a 1.13nH inductance at 12GHz is achieved after optimising the symmetric inductor.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesProceedings of 1st Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2009en_US
dc.subjectCapacitive couplingsen_US
dc.subjectGHz frequenciesen_US
dc.subjectHigh Q factoren_US
dc.subjectHigh qualityen_US
dc.subjectHigh resistivityen_US
dc.subjectMEMS technologyen_US
dc.subjectOptimisationsen_US
dc.subjectQ-factorsen_US
dc.subjectSubstrate lossen_US
dc.subjectSymmetric inductorsen_US
dc.titleA very high Q-factor inductor using MEMS technologyen_US
dc.typeWorking Paperen_US


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