dc.contributor.author | Norainon Mohamed | |
dc.date.accessioned | 2009-02-09T09:20:14Z | |
dc.date.available | 2009-02-09T09:20:14Z | |
dc.date.issued | 2007-05 | |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/4615 | |
dc.description | Access is limited to UniMAP community. | en_US |
dc.description.abstract | This project was to produce a template of MOSFET and IGBT thermal management in DC
to DC converter. Thermal management included by supplying variable input voltages to the
DC to DC converter, and gets the variables of operating junction temperature, thermal
resistance, and safety margin of operating junction temperature and power dissipation.
According to the DC to DC converter circuit, the equations of the power dissipation is from
the MOSFET and IGBT, then from the equations, the operating junction temperature,
thermal resistance, and safety margin of operating junction temperature has calculated with
respect to the variable input voltages. The technique that has been used is by varying the
duty cycle of the MOSFET and IGBT. MathCAD 13 was used as the method of solution.
This report highlights on how to get the variable thermal parameters by varying the input
voltages. | en_US |
dc.language.iso | en | en_US |
dc.publisher | School of Electrical Systems Engineering | en_US |
dc.subject | Electronic apparatus and appliances -- Temperature control | en_US |
dc.subject | Field-effect transistors | en_US |
dc.subject | Electric current converters | en_US |
dc.subject | Converters | en_US |
dc.subject | Power loss | en_US |
dc.subject | Heat -- Transmission | en_US |
dc.title | A development of MOSFET and IGBT thermal management in DC to DC converter | en_US |
dc.type | Learning Object | en_US |
dc.contributor.advisor | Professor Robert Teasdale Kennedy (Advisor) | en_US |
dc.publisher.department | Universiti Malaysia Perlis(UniMAP) | en_US |