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dc.contributor.authorNorainon Mohamed
dc.date.accessioned2009-02-09T09:20:14Z
dc.date.available2009-02-09T09:20:14Z
dc.date.issued2007-05
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/4615
dc.descriptionAccess is limited to UniMAP community.en_US
dc.description.abstractThis project was to produce a template of MOSFET and IGBT thermal management in DC to DC converter. Thermal management included by supplying variable input voltages to the DC to DC converter, and gets the variables of operating junction temperature, thermal resistance, and safety margin of operating junction temperature and power dissipation. According to the DC to DC converter circuit, the equations of the power dissipation is from the MOSFET and IGBT, then from the equations, the operating junction temperature, thermal resistance, and safety margin of operating junction temperature has calculated with respect to the variable input voltages. The technique that has been used is by varying the duty cycle of the MOSFET and IGBT. MathCAD 13 was used as the method of solution. This report highlights on how to get the variable thermal parameters by varying the input voltages.en_US
dc.language.isoenen_US
dc.publisherSchool of Electrical Systems Engineeringen_US
dc.subjectElectronic apparatus and appliances -- Temperature controlen_US
dc.subjectField-effect transistorsen_US
dc.subjectElectric current convertersen_US
dc.subjectConvertersen_US
dc.subjectPower lossen_US
dc.subjectHeat -- Transmissionen_US
dc.titleA development of MOSFET and IGBT thermal management in DC to DC converteren_US
dc.typeLearning Objecten_US
dc.contributor.advisorProfessor Robert Teasdale Kennedy (Advisor)en_US
dc.publisher.departmentUniversiti Malaysia Perlis(UniMAP)en_US


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