The phenomenological theory of Far-Infrared spectroscopy for a ferroelectric fim system

Abstract

We describe a detailed phenomenological theory of far-infrared (FIR) spectroscopy in symmetric and asymmetric ferroelectric (FE) film for the second and first-order phase transition. For the asymmetric FE film, a silicon (Si) substrate with a partial mirror at the top of the film is considered. The formalism is based on the Landau- Devonshire (L-D) model involving free-energy expansion in term of polarization for both order of phase transition and the optics calculation is described by Landau-Khalatnikov (L-K) equation of motion and electromagnetic wave equation. The calculation focuses only on the analytical solution with no surface effect δ −1 = 0 . Results of this work hopes to benefit development of future electronic devices.