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dc.contributor.authorUda, Hashim, Prof. Dr.
dc.contributor.authorZul Azhar, Zahid Jamal, Prof. Dr.
dc.contributor.authorNur Hamidah, Abdul Halim
dc.contributor.authorMohammadd Nuzaihan, Mohd Nor
dc.contributor.authorMohd Sallehudin, Saad
dc.contributor.authorPhang, Keng Chew
dc.contributor.authorHaffiz, Abd Razak
dc.contributor.authorBahari, Man
dc.date.accessioned2010-07-14T07:50:12Z
dc.date.available2010-07-14T07:50:12Z
dc.date.issued2006-05-19
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8298
dc.descriptionProf. Dr. Uda Hashim and his team won silver for MOS Transistor (Fabricated Using In-House Low Cost Facility) at ITEX 2006, 19th - 21st May 2006 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur, Malaysia.en_US
dc.description.abstractMOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor is done on 100mm silicon wafer. The active region of the transistor, which are source and drain are formed by either solid or liquid dopant. These transistors were fabricated using in-house low cost facility which is designed and developed by KUKUM internal expertise. The fabrication work is done in the cleanroom Class ISO 5 and ISO 6.en_US
dc.language.isoenen_US
dc.publisherMalaysian Invention & Design Society (MINDS)en_US
dc.relation.ispartofseries17th International Invention, Innovation & Technology Exhibition (ITEX) 2006en_US
dc.subjectMOS transistoren_US
dc.subjectTransistoren_US
dc.subjectKUKUM -- Researchen_US
dc.subjectInternational Invention, Innovation & Technology Exhibition 2006en_US
dc.subjectITEX 2006en_US
dc.titleMOS Transistor (Fabricated Using In-House Low Cost Facilities)en_US
dc.typeImageen_US
dc.contributor.urluda@unimap.edu.myen_US


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