Pattern designed for combination of optical lithography and electron beam lithography
Date
2009-06-20Author
S. Fatimah, Abd Rahman
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
A. M., Mohamed Nuri
Muhamad Emi Azri, Shohini
Metadata
Show full item recordAbstract
In this paper the fabricated pattern of
nanometer and micrometer structures created with
electron beam lithography (EBL) and optical
lithography on silicon on insulator (SOI) material
is presented. The resist used to demonstrate this
EBL pattern creation is ma-N 2403 which is a
negative tone photoresist series, while positive
resist is used for transform mask design using
optical lithography. Three different patterns
structures are fabricated on the sample namely
alignment mark, silicon nanowire and metal pad.
Silicon nanowire is designed using GDS II Editor
Software and exposed using SEM based EBL
system while alignment mark and metal pad are
designed using AutoCAD and exposed using
conventional photolithography process. The
fabricated structures are observed using high
power microscope and SEM imaging.