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dc.contributor.authorRetnasamy, Vithyacharan
dc.contributor.authorZaliman, Sauli, Dr.
dc.contributor.authorAaron, Koay Terr Yeow
dc.contributor.authorGoh, Siew Chui
dc.contributor.authorKamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
dc.date.accessioned2014-06-05T09:03:30Z
dc.date.available2014-06-05T09:03:30Z
dc.date.issued2013-10
dc.identifier.citationAdvances in Environmental Biology, vol. 7(SPEC. ISSUE 12), 2013, pages 3654-3659en_US
dc.identifier.issn1995-0756
dc.identifier.urihttp://www.aensiweb.com/old/aeb_October-special_2013.html
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/35122
dc.descriptionLink to publisher's homepage at http://www.aensiweb.com/en_US
dc.description.abstractWettability in microfluidic has direct influence to its fluid flow channels. This paper investigates the variable parameters that affect the wetability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE). A total of four controllable process variables, with 16 sets of experiments were scrutinized using a designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. The result suggests that the type of gaseous is the most significant effect contributing to the contact angle values where SF6+Ar gives higher values of contact angle compared to CF4+Ar gas. All the experiments produced the contact angle greater than 90° and are included in hydrophilic category.en_US
dc.language.isoenen_US
dc.publisherAENSI Publisher All rights reserveden_US
dc.subjectContact angleen_US
dc.subjectDOEen_US
dc.subjectPlatinumen_US
dc.subjectRIEen_US
dc.subjectWetabilityen_US
dc.titleWettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseousen_US
dc.typeArticleen_US
dc.contributor.urlvc.sundress@gmail.comen_US
dc.contributor.urlzaliman@unimap.edu.myen_US
dc.contributor.urlvc@unimap.edu.myen_US


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