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dc.contributor.authorNormah, Ahmad
dc.contributor.authorUda, Hashim
dc.contributor.authorMohd Jeffery, Manaf
dc.contributor.authorKader Ibrahim, Abdul Wahab
dc.date.accessioned2017-10-30T01:38:17Z
dc.date.available2017-10-30T01:38:17Z
dc.date.issued2008
dc.identifier.citationJournal of Engineering Research and Education, vol. 5, 2008, pages 7-20.en_US
dc.identifier.issn1823-2981
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/50156
dc.descriptionLink to publisher's homepage at http://jere.unimap.edu.myen_US
dc.description.abstractFinding a robust alignment strategy is one of the key evaluations in defining photolithography process. Alignment is a process to determine how the current pattern is placed on the wafer. Alignment is done by an optical system, which means that it is dependable on the quality of the alignment signal to determine the correct orientation. Alignment signal is generated by alignment mark, a diffraction grating structure (trench and line structure) printed on wafer. Hence, the processing steps can possibly affect the properties of alignment mark. The alignment mark depth (trench depth) can be varied due to the nature of processing. According optics, a light optical path variation may lead to a destructive interference, which is not good.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectAlignment Signalen_US
dc.subjectLithographyen_US
dc.subjectAlignment Marken_US
dc.titleEffect of alignment mark depth on alignment signal behavior in advanced lithographyen_US
dc.typeArticleen_US
dc.contributor.urluda@kukum.edu.myen_US
dc.contributor.urlnormah_ahmad@silterra.comen_US


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