Browsing School of Microelectronic Engineering (FYP) by Subject "Integrated circuits"
Now showing items 1-20 of 40
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Analysis & design low power multiplier using TSMC 0.18µm CMOS technology
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)As the advance of VLSI technology, low power design has become an important topic in VLSI design. This project is to design a low power multiplier implemented in mentor graphic tools. Low power multipliers are developed ... -
Analysis of Switched Mode Power Supply (SMPS) with Energy Saving Requirement
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Nowadays, the Switched-Mode Power Supply (SMPS) plays an important role in the consumer power market. With its small size, it can be found everywhere from mobile phone chargers to Plasma TVs or even in compact dics players ... -
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ... -
Analysis the role of supply voltage and load capacitor in small-signal MOSFET amplifiers
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)The main objective of this project is to investigate the role of supply voltage and load capacitance in the performance of small-signal MOS amplifier with the PSpice simulation for the Common Source, Common Gate and Common ... -
Car Reverse Sensor with distance display
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Car reverse sensor with distance display is a design to improve driver awareness in maneuvering reversed gear. The design also helps deaf person to benefit from today technology. The distance displays fast enough to give ... -
Coherent effect on LOCOS and STI technique for 0.18 µm CMOS technology using Taurus Workbench
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)LOCOS (Local Oxidation of Silicon) and STI (Shallow Trench Isolation) are two isolation techniques used in integrated circuit fabrication. Further device scaling using LOCOS technique is no longer practical for technology ... -
Comparison of Various Barrel Shifter
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-05)Barrel shifters are often utilized by embedded digital signal processors and general-purpose processors to manipulate data. This project design alternatives for 16 bit barrel shifters that perform the following function ... -
Design a current mirror using body driven technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Current mirror or current source is a one of the key elements in analog circuit design. For high performance analog circuit applications, the accuracy and output impedance are the most important parameters to determine the ... -
Design and analysis CMOS Cascode amplifier
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)The design of CMOS cascode amplier is presented which it will constructed with the circuit of current mirror and two transistor are placed in cascode topology. The design need to achieve the value that will meet the ... -
Design and analysis of Floating Point multiplier
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)The most important floating-point representation is defined in IEEE Standard 754, adopted in 1985. This standard was developed to facilitate the portability of programs from one processor to another and to encourage the ... -
Design and analysis of low power using Sleepy Stack and Zig-Zag technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Now days the design of CMOS becomes greater where the number of transistor in design increased largely. However there are some problem that occurs during the excellent design and the increasing of transistor where the ... -
Design and analysis of Three-Axis Piezoresistive accelerometer
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Recently, micro-electromechanical system (MEMS) technologies have been used to manufacturer accelerometers. MEMS sensors include tranducers elements and the necessary signal conditioning electronics integrated together ... -
Design and simulation of Piezoresistive pressure sensor
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)The piezoresistive effect describes the changing electrical resistance of a material due to applied mechanical stress. Electrical resistor will change its resistance when it experiences a strain and deformation. Pressure ... -
Design and Simulation of CMOS Operational Amplifier using Mentor Graphics Tool
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Today’s atmosphere and demands continue to drive operating voltages down, especially for widely used components such as the Operational Amplifier. Some of the motivations driving the market are integration, battery operated ... -
Design of tool kit for Active Filter Circuit PC-based
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Filters are circuit that pass selected frequencies while rejecting other frequencies. Active filter use active device such as op-amp combined with passive elements such as resistor, capacitors and inductors. The active ... -
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ... -
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)The degree to which deposited metals cover steps over topography is important to the yield and reliability of devices in very large scale integrations (VLSI). In evaporated and sputtered thin films, the most difficult steps ... -
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. ... -
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ... -
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will ...