Browsing School of Microelectronic Engineering (FYP) by Subject "Negative metal oxide semiconductors (NMOS)"
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Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. ... -
Fabrication Of 50 µm transistor and AlNiAu interconnection process
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing ... -
Simulation Of 0.35 Um NMOS Process Based on UniMAP Cleanroom Facilities
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-05)The Micro Fabrication Cleanroom in University Malaysia Perlis (UniMAp) was completed in December 2003 and was built as a teaching laboratory. The goal of this project is to simulate a 0.35um negative-metal-oxide-semiconductor ... -
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...