Browsing School of Microelectronic Engineering (FYP) by Subject "Semiconductors"
Now showing items 1-17 of 17
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Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ... -
Design and analysis of Floating Point divider
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)As the advances of VLSI technology, low power design has become an important topic in VLSI design. Scaling down supply voltage is an effective way for power reduction because of its quadratic relationship to dynamic power. ... -
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ... -
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ... -
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. ... -
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will ... -
Fabrication and characterization of Barium Strontium Titanate (BA1-XSRXTIO3 BST) for heat sensor application
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Ferroelectric Barium Strontium Titanate (BST) thin films were successfully prepared by wet chemical deposition or sol-gel method and characterized using SPA, AFM, and sensing properties. The BST thin film was fabricated ... -
Fabrication and simulation of PNP Bipolar transistor based on Spin On Dopant technique and Electrical characterization
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)In this project, the fabrication and simulation of pnp transistor was performed. From fabrication process, the electrical characteristic and sheet resistance of the device was observed by 4 point probe measurement. The ... -
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ... -
The influence of the accelerating voltages on the growth of the square structure during Electron Beam Induced Deposition (EBID) method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Electron beam induced deposition (EBID) is a method for high-resolution direct material deposition from the gas phase in the Scanning Electron Microscopy (SEM) onto a substrate. In this project, EBID method has been used ... -
Optimization of Nitride deposition process using Taguchi method
(Universiti Malaysia PerlisSchool Of Microelectronic Engineering, 2008-04)The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) ... -
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ... -
Study of the temperature effect on thickness and surface roughness of SiO2
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ... -
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ... -
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control ... -
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ... -
Ultra low power 8-bit microcontroller using Super Cut-Off CMOS (SCCMOS)
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)As the advances of VLSI technology, low power design has become an important topic in VLSI design. Scaling down supply voltage is an effective way for power reduction because of its quadratic relationship to dynamic ...