Synthesis and charactherization of TiO₂ doped SnO₂ thin film prepared by sol-gel method
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Date
2019-12Author
Dewi Suriyani, Che Halin
Kamrosni, Abdul Razak
Azliza, Azani
Mohd Mustafa Al Bakri, Abdullah
Mohd Arif Anuar, Mohd Salleh
Norsuria, Mahmed
Nur Syahirah, Shafee
Muhammad Mahyiddin, Ramli
Ayu Wazira, Azhari
Chobpattana, Varistha
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In this work, preparation of titanium dioxide doped with tin oxide, SnO₂/TiO₂ thin films deposited onto silicon wafer via sol-gel method. Different amount of SnO₂ was added (5 ml, 10ml and 15 ml) into parent solution. The obtained films were annealed at different temperature which is 400°C, 500°C and 600°C for 1 hour. Morphological and surface topography of the SnO₂ doped TiO₂ thin films were studied using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). The annealed films shows non-uniform crack due to the mismatch of coefficient of thermal expansion (CTE) between SnO₂/TiO₂ thin films and silicon wafer.