MOS Transistor Mask Design Using SEM Based E-Beam Lithography

Abstract

Electron beam lithography (EBL) is one of the alternative tools in transferring micro and nano circuit patterns from design editor to the substrate. EBL is state-of-the-art technology for micro and even to nano feature size in direct writing technology. SEM based EBL will be used to define the mask for device fabrication. These masks were designed in GDSII Editor in EBL System. Poly-methyl-metacrylate (PMMA) is used as a resist in the EBL.